FULLY-DEPLETED, FULLY-INVERTED, SHORT-LENGTH AND VERTICAL CHANNEL, DUAL-GATE, CMOS FET

摘要

PROBLEM TO BE SOLVED: To attain fully-depleted and fully-inverted conductive characteristics of an FET, without having to use special techniques. ;SOLUTION: A short-length vertical channel, dual-gate, CMOS FET obtains improved immunity to short channel effects. The FET 20 has a plurality of vertically-extending channel segments 40 and a gate structure with a plurality of vertically-orientated gate segments which are positioned between channel segments. A method of fabricating the FET involves forming the plurality of channel segments and reducing the width of the segments by subtractive oxidation in the spaces between the channels.;COPYRIGHT: (C)2001,JPO