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Fully-depleted, fully-inverted, short-length and vertical channel, dual-gate, cmos fet
Fully-depleted, fully-inverted, short-length and vertical channel, dual-gate, cmos fet
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机译:全耗尽,全反相,短长度和垂直通道,双门,CMOS FET
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摘要
A short-length vertical channel, dual-gate, CMOS FET obtains improved immunity to short channel effects. The FET has a plurality of vertically-extending channel segments and a gate structure with a plurality of vertically-orientated gate segments positioned between channel segments. A method of fabricating the FET involves forming the plurality of channel segments and reducing the width of the segments by subtractive oxidation in the spaces between the channels.
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