首页> 外国专利> MANUFACTURE OF THIN-FILM RESISTOR AND METHOD FOR DETECTING TEMPERATURE CHARACTERISTIC OF RESISTANCE VALUE OF THE THIN-FILM RESISTOR

MANUFACTURE OF THIN-FILM RESISTOR AND METHOD FOR DETECTING TEMPERATURE CHARACTERISTIC OF RESISTANCE VALUE OF THE THIN-FILM RESISTOR

机译:薄膜电阻器的制造以及薄膜电阻器的电阻值的温度特性的检测方法

摘要

PROBLEM TO BE SOLVED: To detect the temperature characteristics of the resistance value of a thin-film resistor in a short time after a thin metallic film or thin semiconductor film used for constituting the thin-film resistor is formed.;SOLUTION: In a method for manufacturing a thin-film resistor 13a, the refractive index or absorption coefficient of a thin metallic film 13 formed on a wafer 10 is detected, and the temperature characteristic of the resistance value of the resistor 13a constituted of the film 13 is detected based on the refractive index or absorption coefficient. When the temperature characteristic of the resistance value of the resistor 13a is found by having the film 13 irradiated with light and detecting the refractive index or absorption coefficient of the film 13 for the light in the this way, the temperature characteristics can be detected, even when no current is made to flow to the resistor 13a. Therefore, the temperature characteristics of the resistance value of the resistor 13a can be found before electrodes 15, etc., for getting contact with the resistor 13a are formed.;COPYRIGHT: (C)2000,JPO
机译:解决的问题:在形成用于构成薄膜电阻器的金属薄膜或半导体薄膜之后,在短时间内检测薄膜电阻器的电阻值的温度特性。为了制造薄膜电阻器13a,检测形成在晶片10上的金属薄膜13的折射率或吸收系数,并基于该膜13检测由薄膜13构成的电阻器13a的电阻值的温度特性。折射率或吸收系数。当通过使膜13被光照射并以此方式检测膜13的折射率或吸收系数而发现电阻器13a的电阻值的温度特性时,即使是该温度特性也可以被检测出。当没有电流流向电阻器13a时。因此,可以在形成用于与电阻器13a接触的电极15等之前发现电阻器13a的电阻值的温度特性。(版权):( C)2000,JPO

著录项

  • 公开/公告号JP2000353602A

    专利类型

  • 公开/公告日2000-12-19

    原文格式PDF

  • 申请/专利权人 DENSO CORP;

    申请/专利号JP19990165685

  • 发明设计人 YAMAMOTO TOMIO;SHIRAKI SATOSHI;

    申请日1999-06-11

  • 分类号H01C7/04;H01C17/06;

  • 国家 JP

  • 入库时间 2022-08-22 01:26:45

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