首页>
外国专利>
MANUFACTURE OF THIN-FILM RESISTOR AND METHOD FOR DETECTING TEMPERATURE CHARACTERISTIC OF RESISTANCE VALUE OF THE THIN-FILM RESISTOR
MANUFACTURE OF THIN-FILM RESISTOR AND METHOD FOR DETECTING TEMPERATURE CHARACTERISTIC OF RESISTANCE VALUE OF THE THIN-FILM RESISTOR
展开▼
机译:薄膜电阻器的制造以及薄膜电阻器的电阻值的温度特性的检测方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
PROBLEM TO BE SOLVED: To detect the temperature characteristics of the resistance value of a thin-film resistor in a short time after a thin metallic film or thin semiconductor film used for constituting the thin-film resistor is formed.;SOLUTION: In a method for manufacturing a thin-film resistor 13a, the refractive index or absorption coefficient of a thin metallic film 13 formed on a wafer 10 is detected, and the temperature characteristic of the resistance value of the resistor 13a constituted of the film 13 is detected based on the refractive index or absorption coefficient. When the temperature characteristic of the resistance value of the resistor 13a is found by having the film 13 irradiated with light and detecting the refractive index or absorption coefficient of the film 13 for the light in the this way, the temperature characteristics can be detected, even when no current is made to flow to the resistor 13a. Therefore, the temperature characteristics of the resistance value of the resistor 13a can be found before electrodes 15, etc., for getting contact with the resistor 13a are formed.;COPYRIGHT: (C)2000,JPO
展开▼