DIELECTRIC FORMATION TO SEAL POROSITY OF ETCHED LOW DIELECTRIC CONSTANT MATERIALS

摘要

A method is provided, the method including forming a first dielectric layer (130) above a structure layer (110), and forming a first opening (220) in the first dielectric layer (130), the first opening (220) having sidewalls. The method also includes forming a second dielectric layer (430) on the sidewalls of the first opening (220).