AN ELECTRON-BEAM EXPOSURE SYSTEM A MASK FOR ELECTRON-BEAM EXPOSURE AND A METHOD FOR ELECTRON-BEAM EXPOSURE

摘要

The present invention provides an electron beam exposure process and an electron beam exposure system wherein the electron beam exposure system includes a scattering angle limiter with a mask including a limiting aperture that limits the amount of scattered electrons passing through the scattering area and the mask, Type electron beam exposure system comprising: a first limiting aperture secured around a crossover surface and having a central aperture and a closed elongated aperture surrounding the central aperture; And a second limiting aperture having a central opening and a closed elongated opening surrounding the central opening. The present invention also provides a stencil-like mask suitable for an exposure system and an exposure process. According to the present invention, it is possible to adjust the proximity effect correction so that the accuracy of the line width is excellent without reducing the throughput in the patterning step of the process of manufacturing the semiconductor device in particular. The mask according to the present invention can be provided with an accurate mask pattern so that an accurate mask pattern can be provided in which pattern exposure with good resolution and accuracy can be performed.