Electron-beam exposure system, a mask for electron-beam exposure and a method for electron-beam exposure

摘要

This invention provides a scattering-angle limiting type of electron-beam exposure system having a mask comprising a scattering region and a limiting aperture which limits the amount of scattered electrons passing through the mask, comprising a first limiting aperture fixed at or near a crossover plane and having a central opening and a closed elongated opening surrounding the central opening; and a second limiting aperture shiftable along an optical axis and having a central opening and a closed elongated opening surrounding the central opening, as well as an electron-beam exposure process using the system. This invention also provides a stencil type of mask suitable for the exposure system and the exposure process. According to this invention, proximity effect correction can be adjusted without significantly reducing a throughput and with excellent linewidth accuracy, especially in a patterning step in manufacturing a semiconductor device. The mask of this invention can be readily prepared with an accurate mask pattern, allowing pattern exposure to be conducted with improved resolution and accuracy.