OPTIMIZED REACHTHROUGH IMPLANT FOR SIMULTANEOUSLY FORMING AN MOS CAPACITOR

摘要

PURPOSE: A MOS structure and a manufacturing method thereof are provided to obtain the low resistance, acceptable defect density, reliability, and process control in a silicon substrate. CONSTITUTION: The method forms in the front face of a silicon substrate(10) the field(16) of Si made amorphous. A silicon substrate(10) contains like illustration the oxide layer(14) formed in the front face of a substrate(10) that there is nothing, alias a wrap, for the shallow trench separation(STI) field(12) and a shallow trench isolation region. The oxide layer, for example, SiO, is used as a mask between various injection phases, and it is removed from the front face of structure by this technical field in front of a re-crystallization annealing phase or in the back using the well-known conventional elimination technique. A silicon substrate(10) contains all the substrate that can be used for a semiconductor manufacture. A substrate(10) can be made into Si wafer, Si chip, silicon on insulator(SOI) structure, or other equivalent structures, and can contain various isolation regions and an active device field in it. Although only the shallow trench isolation region was shown in the drawing, this invention also contains the silicon substrate of the others containing the conventional separation / active field.