Optimization of MOS capacitor based short flow for monitoring ion implantation-induced charging

摘要

Application of MOS antenna capacitors for charging assessment is a widely recognized approach among both process engineers and tool manufacturers. This paper presents results of optimizing methodology to monitor charging caused by ion beams using on wafer MOS capacitors. Main factors considered during the optimization process include simplicity, testability, and sensitivity. Short flow manufacturing of monitor wafers was developed to support "stick-and-test" approach.