首页>
外国专利>
/ HDP CAPPING LAYER OR POLISH LAYRE OVER HSQ/PETEOS ILD STACK TO ENHANCE PLANARITY AND GAP-FILL
/ HDP CAPPING LAYER OR POLISH LAYRE OVER HSQ/PETEOS ILD STACK TO ENHANCE PLANARITY AND GAP-FILL
展开▼
机译:/ HSQ / PETEOS ILD堆栈上的HDP覆盖层或抛光层,以增强平面性和间隙填充
展开▼
页面导航
摘要
著录项
相似文献
摘要
PURPOSE: A HDP Capping layer or polish layer over HSQ/PETEOS ILD(inter level dielectrics) stack to enhance planarity and gap-fill is provided to form a dielectric stack with chemical and mechanical polishing process, without forming gaps, joints and divots. CONSTITUTION: The method forms an ILD, using high density plasma cap layers(HDP). A liner layer and an HSQ layer are deposited in a metal wire on a semiconductor body, followed by deposition of PETEOS layers on the HSQ layer. Gaps, joints or divots may be formed in the HSQ layer. Then HDP cap layers are deposited by means of high deposition ration to etching. The HDP processing forces to open any gaps to have them filed by the HDP materials. A structure formed through the method is subjected to chemical and mechanical polishing process after/before the HDP processing.
展开▼