PURPOSE: A method of manufacturing a semiconductor device for controlling easily an etching selection ratio and an etching speed is provided to control correctly a density of ion or a density of radical for determining an etching selection ratio and an etching speed. CONSTITUTION: CF3I, CF3Cl, and CF3Br are used as a source for forming CF3 ions or radicals. C2F4 and C3F6 are used as a source for forming CF2 ions or radicals. One gas of the C2F4 and C3F6 and one gas of CF3I, CF3Cl, and CF3Br are used as an etching source. An etching process is performed by using the CF2 ions and radicals and the CF3 ions and radicals. In the etching process, plasma having an electron energy of 2 eV to 4 eV is used. One of HELICAL, HELICON, ECR, TCP, MERIE, and SWP is used as a source of plasma.
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机译：用途：提供一种用于容易地控制蚀刻选择比和蚀刻速度的半导体器件的制造方法，以正确地控制离子密度或自由基的密度，以确定蚀刻选择比和蚀刻速度。组成：CF3I，CF3Cl和CF3Br用作形成CF3离子或自由基的来源。 C2F4和C3F6用作形成CF2离子或自由基的来源。 C 2 F 4和C 3 F 6的一种气体以及CF 3 I，CF 3 Cl和CF 3 Br的一种气体用作蚀刻源。通过使用CF 2离子和自由基以及CF 3离子和自由基进行蚀刻工艺。在蚀刻过程中，使用具有2 eV至4 eV电子能的等离子体。 HELICAL，HELICON，ECR，TCP，MERIE和SWP中的一种用作血浆来源。
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