PURPOSE: A method of a resistance stabilization annealing process for neutron transmutation doping is provided to obtain distribution of uniform resistance by improving an annealing processing condition when manufacturing a silicon. CONSTITUTION: An FZ wafer with a high resistance of 1000 to 2000 cm is cleaned by using electrolyzed water. Neutrons are irradiated to the FZ wafer during 8.3 hours to 33 hours. The FZ wafer is cleaned by using ionized water. An annealing process is performed under N2 atmosphere and a temperature of 800 degrees centigrade during 30 minutes to one hour. The resistance distribution is formed uniformly by performing the annealing process.
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