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-- Etching solution for Molybdenum-Aluminum alloy-Molybdenum metal layer

机译:-钼-铝合金-钼金属层的蚀刻液

摘要

PURPOSE: An etchant for etching a tri-layered metallic film of Mo/Al-Nd/Mo is provided, which can etch the tri-layered metallic film of Mo/Al-Nd/Mo without undercut phenomenon of a bottom Mo layer while forming a metal line of a TFT-LCD. CONSTITUTION: A tri-layered metallic film of Mo/Al-Nd/Mo is used as a source/drain array metal line. And the etchant includes H3PO4 of 68-74 wt%, HNO3 of 2-4 wt%, CH3COOH of 5-15wt% and water. And the etchant also includes an additive of 0.01-0.l05 wt% of the whole composition. The etchant also includes H3PO4 of 70-74 wt%, HNO3 of 2-4 wt%, CH3COOH of 8-15wt%, water and an additive of 0.01-0.03 wt%. The water is an ultra pure water having a resistance above 18M ohm.
机译:目的:提供一种蚀刻剂,用于蚀刻Mo / Al-Nd / Mo的三层金属膜,该蚀刻剂可以蚀刻Mo / Al-Nd / Mo的三层金属膜,而在形成时没有底部Mo层的底切现象。 TFT-LCD的金属线。组成:Mo / Al-Nd / Mo的三层金属膜用作源/漏阵列金属线。并且蚀刻剂包括68-74重量%的H 3 PO 4,2-4重量%的HNO 3,5-15重量%的CH 3 COOH和水。并且蚀刻剂还包括整个组合物的0.01-0.105wt%的添加剂。该蚀刻剂还包括70-74重量%的H 3 PO 4,2-4重量%的HNO 3,8-15重量%的CH 3 COOH,水和0.01-0.03重量%的添加剂。水是电阻高于18M欧姆的超纯水。

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