/ / Raised silicide source/drain MOS transistors having enlarged source/drain contact regions and method

摘要

PURPOSE: Silicide source/drain MOS transistors are provided to form contacts on several active region substrates by forming several isolated regions to electrically isolate adjacent active regions each other. CONSTITUTION: A plurality of active regions are defined on the substrate by forming one or more active region isolating regions for isolating the adjacent active regions to each other. Source regions and drain regions are formed in the respective active regions. An electrode structure having electrodes and insulating sidewalls are formed on the substrate. A contact material is deposited on the substrate and the structure. And the insulated electrodes from the deposited contact material are planarized.