首页> 外国专利> POLISHING LIQUID FOR POLISHING COMPONENTS PREFERABLY WAFERS ESPECIALLY FOR CHEMICALLY-MECHANICALLY POLISHING COMPONENTS OF THIS TYPE

POLISHING LIQUID FOR POLISHING COMPONENTS PREFERABLY WAFERS ESPECIALLY FOR CHEMICALLY-MECHANICALLY POLISHING COMPONENTS OF THIS TYPE

机译:用于抛光组件的抛光液,尤其适用于这种类型的化学机械抛光组件的抛光剂

摘要

TECHNICAL FIELD The present invention relates to a polishing solution for chemically-mechanically polishing a component, particularly a wafer, particularly a component of the above-mentioned type, and a method for producing the polishing solution. The polishing liquid according to the present invention comprises a polishing base liquid and an oxidizing agent. It is an object of the present invention to provide an economical abrasive which can be produced by a simple method, wherein the abrasive can be used as an alkaline or acidic abrasive, and the metal layer can be polished especially with the oxidizing agent. Ozone is also used as the oxidizing agent. The ozone is a strong oxidizing agent, and its redox potential is sufficient to oxidize or polish the used metal, even in an acidic or alkaline environment.
机译:抛光液及其制造方法技术领域本发明涉及一种用于化学机械抛光部件,特别是晶片,特别是上述类型的部件的抛光液及其制造方法。根据本发明的抛光液包括抛光基液和氧化剂。本发明的目的是提供一种经济的磨料,其可以通过简单的方法生产,其中该磨料可以用作碱性或酸性磨料,并且该金属层可以特别地用氧化剂抛光。臭氧也用作氧化剂。臭氧是一种强氧化剂,即使在酸性或碱性环境下,其氧化还原电位也足以氧化或抛光用过的金属。

著录项

  • 公开/公告号KR20010079831A

    专利类型

  • 公开/公告日2001-08-22

    原文格式PDF

  • 申请/专利权人 추후제출;

    申请/专利号KR20017003346

  • 发明设计人 플리얼라이너;쟁어안네테;

    申请日2001-03-15

  • 分类号C09K3/14;

  • 国家 KR

  • 入库时间 2022-08-22 01:13:01

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