- - COPPER CHEMICAL-MECHANICAL POLISHING PROCESS USING A FIXED ABRASIVE POLISHING PAD AND A COPPER LAYER CHEMICAL-MECHANICAL POLISHING SOLUTION SPECIFICALLY ADAPTED FOR CHEMICAL-MECHANICAL POLISHING WITH A FIXED ABRASIVE PAD

摘要

The present invention relates to a copper chemical-mechanical polishing process using a fixed polishing pad and a copper-layer chemical-mechanical polishing solution specifically used for chemical-mechanical polishing using a fixed polishing pad. In one embodiment, the process is described at a pH of 7.0 or higher. In one embodiment, the process is described at a pH of 7.0 or less. In one embodiment, a copper layer chemo-mechanical polishing solution specifically used for a chemical-mechanical polishing solution using a fixed polishing pad comprises a copper oxidation component present at 1% to 15% by volume, 0.01% to 2% Chemical-mechanical corrosion inhibiting substances present at a pH of 7.0 or lower. In one embodiment, a copper layer chemical-mechanical polishing solution specifically used for a chemical-mechanical polishing solution using a fixed polishing pad comprises copper oxidation components present at 1% to 15% by volume, 0.1% to 15% The present copper complex is composed of a pH of 7.0 or less.