Method for manufacturing Scattering with angular limitation in Projection Electron beam Lithography Mask

摘要

PURPOSE: A method of fabricating a SCALPEL(scattering with angular limitation in projection electron beam lithography) mask is to minimize space charge effect and thus reduce beam blur, and also facilely repair the mask contaminated by particles. CONSTITUTION: The first and second insulating layer(303,308) is formed on an upper and lower portion of a semiconductor substrate(301). The second insulating layer is selectively removed to form the second insulating layer pattern(302a). The first scattering layer is formed on the first insulating layer. An exposed portion of the semiconductor substrate is selectively removed using the second insulating layer pattern as a mask. The first scattering layer is selectively removed to form the first scattering layer pattern(305a). The third insulating layer is selectively formed on the first scattering layer pattern corresponding to the second insulating layer and on the first insulating layer between the first scattering layer patterns. The second scattering layer is formed on an entire surface including the third insulating layer. The second scattering layer is selectively removed to remain a desired portion of the third insulating layer and thus to form the second scattering layer pattern(310a). The fourth insulating layer is formed on the entire surface including the second scattering layer pattern.