GaN LED Fabrication Method of GaN related LED using Substrate Remove Technology

摘要

PURPOSE: A manufacturing method of GaN LED using substrate removing technique is provided to remove optical absorption loss and the loss due to dielectric difference between GaN substance and a substrate by removing a substrate having a GaN system LED grown. CONSTITUTION: A GaN system LED is attached to a silicon substrate(51), and consists of a P-metal layer(30), a P-GaN layer(24), an active and barrier layer(23), an N-GaN layer(22), a dielectric protection film(21) and an N-metal(70). First, the P-metal layer(30) is formed on a P-GaN layer(24). Then, portions between elements are etched using the P-metal layer(30) as masking substance. Next, the P-metal layer(30) is reversely bonded to a silicon substrate(51) so that the P-metal layer(30) becomes a junction and then a substrate which a thin film is grown on is removed. Then, an N-metal layer is formed on a surface of the N-GaN layer(22) exposed by the substrate removing step.