Fabrication Method of GaN related LED using Substrate Remove Technology

摘要

The present invention relates to a GaN-based LED production of a new structure for improving the non-uniform current distribution problems in the conventional AlGaInN-based low external quantum efficiency of the LED (External Quantum Efficiency), the thermal problems, and the active layer. The unique characteristics of the proposed structure is a GaN-based LED thin film used for the growth substrate has gotten N- doped GaN thin film and exposed to remove the _{(Al 2 O 3, SiC,} Si ...), because of the substrate removed N- form a metal and a way to make the two metal parts P- junction by flip attached to the silicon substrate manufacturing the LED. The advantage of this structure is to solve the absorbent matter of the optical output, and further thinned LED thickness to less than 10um by light loss to the substrate in the removal of the substrate due to the difference in dielectric constant (Dielectric Constant) between the substrate and the GaN interface due possible to improve the external quantum efficiency (external quantum efficiency) to occur effectively optical playback (Photon Recycling) inside the LED device, and, since the heat generated from the LED across the board can easily fall into the silicon substrate through the metal of the element P- It can significantly improve the thermal properties. In addition, it is possible to significantly improve the general problems of non-uniform distribution current within the active layer of the device that appears due to the low P- doping problem with topical P- metal forming and metal forming N- problem of the GaN-based LED.; The invention is attached upside down to be in, the P- metal contacts the substrate after the step of forming the P- metal on a thin film over the doped P- silicon (Si) substrate for making GaN-type LED having a PN junction diode structure after removing the substrate by using the proposed method in the present invention to form a N- N- doped GaN thin film on the metal exposed by removing the substrate is characterized in that to produce the LED.