METHOD OF FORMING OHMIC CONTACTS USING A SELF DOPING LAYER FOR THIN-FILM TRANSISTORS

摘要

PURPOSE: A method of forming ohmic contact using a self doping layer for a thin film transistor is provided to simplify formation of an ohmic contact for a thin film transistor. CONSTITUTION: A metal-contained layer including integrally formed dopants is formed. The metal-contained layer is patterned to form elements for the semiconductor device. A semiconductor layer is deposited to contact with the metal-contained layer. The semiconductor device is annealed and dopants are outwardly diffused from the metal-contained layer within the semiconductor layer . Therefore, an ohmic contact is formed.