2 Dual gate semiconductor device having a nitrogen and oxygen containing barrier layer and a method of manufacture therefor

摘要

PURPOSE: A dual-gate semiconductor device having barrier layer including nitrogen and oxygen and its manufacturing method is provided to solve a problem associated with boron diffusion. CONSTITUTION: A first gate dielectric(220) are formed on a low voltage region(125). A diffusion barrier layer containing nitrogen and oxygen(230) is formed on the first gate dielectric on the first gate dielectric. A second gate dielectric having a thickness thicker than that of the first gate dielectric is formed on a high voltage region(130), and there is no the diffusion barrier layer.