A METHOD OF FABRICATING THIN FILM TRANSISTOR USING SELECTIVE SILICON ION-IMPLANTATION AND NOVEL EXIMER LASER CRYSTALLIZATION OF AMORPHOUS SILICON FILM

摘要

The present invention to get, and more particularly relates to a thin film transistor manufacturing method using the polycrystalline silicon thin film formed and him using laser crystallization, it is possible to use a low temperature process, the polycrystalline silicon thin film with a uniform and reproducible on semiconductor technology for that purpose . The present invention increase the crystal grain of the polycrystalline silicon by using a part of inducing mechanical strain in the thin film by carrying out selective to high-energy, high-density silicon ion implantation in the amorphous silicon thin film before laser crystallization, and deformed in the nucleation of the laser crystallization process and at the same time by reducing the trap density can be uniform and produce a polycrystalline silicon thin film of good quality with reproducible.