High Temperature Electrode-Barriers for Ferroelectric Capacitors and Other Capacitor Structures

摘要

Capacitors for silicon or other substrates have a multilayer electrode structure. A preferred form is, and has an upper layer of the lower electrode Pt-Rh-O _X of the lower layer, the intermediate layer and the Pt-Rh Pt-Rh-O _X located on the substrate. Ferroelectric materials such as PZT (or other materials) are located at the bottom electrode. Preferably, the upper electrode having the same composition as the lower electrode is located on the opposite side of the ferroelectric from the lower electrode.