SUB-QUARTER-MICRON COPPER INTERCONNECTIONS WITH IMPROVED ELECTROMIGRATION RESISTANCE AND REDUCED DEFECT SENSITIVITY

摘要

The method of the present invention provides sub-half-micron copper interconnections with improved electromigration and corrosion resistance. The method of the present invention employs electroplated copper in which a seed layer is deposited by chemical vapor deposition or physical vapor deposition in a layer of less than approximately 800 angstroms. It includes a double damascene.