A semiconductor memory device which has a self-refresh - device

摘要

The apparatus includes a memory field provided with matrix formed memory cells, an address labelling circuit (41), and a refresh execution circuit to execute a data refresh of memory cells corresponding to a word line. Also provided are two signal production circuits and a word line driver circuit. The word lines of the memory field are split into several groups with each word line corresponding to a row of cells, with bit line pairs being provided for the columns. In the refresh mode, an upper address is allocated to each group and an under address is allocated to each word line in each group. The address labelling circuit reacts to a clock circuit at the setting of a self refresh mode with each following label of each under address belonging to an over address and then with labels of each under address belong to another over address. One signal production circuit (1-8), provided with each corresponding over address, outputs a group selection signal in response to the label of each over address. The second signal producing circuit outputs a corresponding word selection signal in response to the label of an under address. The word line driver brings a word line corresponding to the group and word line selection signals into an active state to bring the refresh circuit into an active state.