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Plasma assisted chemical vapor deposition of silicon nitride, from silane, ammonia, and inert carrier gas, employs optimized gas flowrates
Plasma assisted chemical vapor deposition of silicon nitride, from silane, ammonia, and inert carrier gas, employs optimized gas flowrates
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机译:等离子辅助化学气相沉积法从硅烷,氨气和惰性载气中沉积氮化硅,采用优化的气体流速
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摘要
An overall flowrate of 50-400 sccm of the reactive gases, is combined with a carrier gas flowrate of 25-200 sccm. An Independent claim is included for corresponding equipment.
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