Mono anti-reflection silicon nitride layer for use on switching circuits with e.g. photodiodes, by single-step plasma enhanced chemical vapor deposition method, is designed as protective layer against data degradation of elements

摘要

The layer is designed as a protective layer against data degradation of elements produced by electrical charge accumulation or UV stress during work procedures of semiconductor disk production process. A value of specific electrical resistance of the layer is adjusted during separation of the layer by varying a ratio of ammonia to silane. Hydrogen concentration of the layer is 20 atomic weight percentage.