Etching oxide layer on nitride layer, comprises preparing plasma derived from carbonaceous and fluorine-containing gas and gas containing nitrogen, and etching in plasma

摘要

Process for etching an oxide layer located on a nitride layer in the upper region of a substrate having a high etching selectivity for the oxide layer comprises preparing a plasma derived from a carbonaceous and fluorine-containing gas and a gas containing nitrogen, and etching the substrate in the plasma.