首页> 外国专利> Compact semiconductor element comprises a wafer having a chip region, a substrate arranged on the chip region, conducting bodies, a distancing device between the wafer and the substrate and component contacts

Compact semiconductor element comprises a wafer having a chip region, a substrate arranged on the chip region, conducting bodies, a distancing device between the wafer and the substrate and component contacts

机译:紧凑型半导体元件包括具有芯片区域的晶片,布置在芯片区域上的基板,导电体,在晶片与基板之间的间隔装置以及元件触点

摘要

Compact semiconductor element comprises a wafer having a chip region, a substrate arranged on the chip region, conducting bodies, a distancing device between the wafer and the substrate and component contacts. Compact semiconductor element comprises a wafer having a chip region (10) with a dielectric contacting assembly surface (101) provided with several contacting spots (100) for the access to the inner circuits of the chip region; a substrate arranged on the chip region of the wafer and having a switching arrangement lying over the assembly surface; conducting bodies (30) arranged between the assembly surface and the switching arrangement surface to connect contacting spots to soldering points; a distancing device between the wafer and the substrate; and component contacts formed on another surface of the substrate opposite the switching arrangement. An Independent claim is also included for a process for the production of the semiconductor element. Preferred Features: The distancing device has several pins (31) extending between the assembly surface and the switching arrangement to form an intermediate chamber between the wafer and the substrate. The intermediate chamber is filled with an insulating layer.
机译:紧凑型半导体元件包括具有芯片区域的晶片,布置在芯片区域上的衬底,导电体,在晶片和衬底之间的间隔装置以及部件触点。紧凑型半导体元件包括晶片,该晶片具有芯片区域(10),该芯片区域具有介电接触组件表面(101),该介电接触组件表面(101)设有多个接触点(100),以接触芯片区域的内部电路。基板,其布置在晶片的芯片区域上并且具有位于组件表面上的开关装置;导电体(30),其布置在组装表面和开关布置表面之间,以将接触点连接到焊接点;晶片与基板之间的间隔装置;元件触点形成在基板的与开关装置相对的另一表面上。对于半导体元件的制造方法也包括独立权利要求。优选特征:间隔装置具有几个销钉(31),它们在装配表面和开关装置之间延伸,以在晶片和衬底之间形成中间腔。中间室填充有绝缘层。

著录项

  • 公开/公告号DE10018638A1

    专利类型

  • 公开/公告日2001-07-19

    原文格式PDF

  • 申请/专利权人 CHEN I-MING;

    申请/专利号DE2000118638

  • 发明设计人 CHEN I-MING;

    申请日2000-04-14

  • 分类号H01L23/50;H01L21/66;H01L21/60;

  • 国家 DE

  • 入库时间 2022-08-22 01:09:49

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