Metal oxide transistor in a silicon-on-insulator construction suppressing effect of suspended body includes barrier layer formed by doping- and semiconductor layers, without application of external voltage

摘要

First and second doping layers (51, 52) of a second conductor type, spaced from the first, are located in an upper surface of the semiconductor layer (4) and do not contact the insulating layer (2). An electrode (7) is located on part of the upper surface of an insulating film (6) between first and second doping layers. A barrier layer (90) formed by the first doping layer (51) and the semiconductor layer (4), extends up to the insulation layer (2) without application of an external voltage.