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Semiconductor device, with island-shaped semiconductor layers in the form of a matrix, use thereof and method for producing the same
Semiconductor device, with island-shaped semiconductor layers in the form of a matrix, use thereof and method for producing the same
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机译:具有矩阵形式的岛状半导体层的半导体器件,其用途及其制造方法
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摘要
A surface stepped portion of the top interlayer insulating layer is reduced. An insulating layer is formed on the entire surface of a silicon substrate. A silicon layer is formed on and in contact with an upper surface of insulating layer. A pair of source/drain regions are formed in silicon layer with a predetermined space. A gate electrode is formed on a region sandwiched by the pair of source/drain regions with a gate insulating layer interposed therebetween. A bit line is formed in connection with source/drain region, and extending in contact with an upper surface of insulating layer. A capacitor configured of a lower electrode layer, a capacitor insulating layer, and an upper electrode layer is formed in contact with source/drain region through a contact hole formed in an interlayer insulating layer.
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