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Precursor composition for forming amorphous metal oxide semiconductor layer, method for producing amorphous metal oxide semiconductor layer, and method for producing semiconductor device
Precursor composition for forming amorphous metal oxide semiconductor layer, method for producing amorphous metal oxide semiconductor layer, and method for producing semiconductor device
The invention provides a precursor composition for forming an amorphous metal oxide semiconductor layer, containing a metal salt, a primary amide, and a water-based solution. An amorphous metal oxide semiconductor layer is formed by use of the composition.
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