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Implantation of helium in semiconductor substrate with increased process efficiency, to form e.g. impurity-trapping cavities, employs trace of inert gas in ionization chamber
Implantation of helium in semiconductor substrate with increased process efficiency, to form e.g. impurity-trapping cavities, employs trace of inert gas in ionization chamber
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机译:以提高的工艺效率将氦气注入半导体衬底中以形成例如杂质捕集腔,在电离室中使用微量惰性气体
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摘要
In the ionization chamber (2) of the implantation unit, a trace (e.g. 5%) of at least one further inert gas is added to the helium.
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