Semiconductor device e.g. double-gate transistor, has cavity formed on substrate and filled with non exposed resin forming gate, and with resin exposed by beams, where exposed resin is isolated from rest of substrate by non exposed resin

摘要

The device (100) has a cavity (104) formed on a substrate (102) made of a semiconductor material e.g. silicon. The cavity is filled with a non exposed hydrogen silsesquioxane (HSQ) type photosensitive resin (106) forming a gate, and a HSQ type photosensitive resin (108) exposed by electron beams. The exposed and non exposed resins form layers parallel to a plane containing a main face (120) of the substrate, where the exposed resin in the cavity is isolated from rest of the substrate by the non exposed resin. Independent claims are also included for the following: (1) a method of forming a cavity in or on a substrate made of a semiconductor material (2) a method of forming a transistor.