Integrated capacitive structure used in analogue and RF circuits dielectric layer comprises homogeneous combination of molecules dielectrics with permittivities behaving oppositely as a function of electric field

摘要

Capacitive structure (20) on a Si substrate (10) comprises first (1) and second (3) electrode layers and dielectric layer (2) comprising a homogeneous combination of molecules of at least two dielectrics with permittivities ( iota ) behaving oppositely as a function of electric field. The proportion of each dielectric is empirically chosen so that capacitance varies as little as possible with voltage. The dielectric of the dielectric layer (2) has formula SiOxNy, where x is different from y. The material of the first (1) and second (2) electrode layers is selected from aluminum, copper, tungsten, titanium, titanium nitride and their alloys. Independent claims are given for: (a) a dielectric comprising a homogeneous combination of molecules of at least two dielectrics with permittivities ( iota ) behaving oppositely as a function of electric field, and where the proportion of each dielectric in the combination is empirically chosen such that the combination has a permittivity whose variation as a function of electric field is as low as possible; and (b) a method of production of the above capacitive structure.