Method for selective growth of Cu3Ge or Cu5Si for passivation of damascene copper structures and device manufactured thereby

摘要

Form a dielectric layer on a surface of a conductive substrate with a trench through the top surface down to the substrate. Form a barrier layer over the dielectric layer including the exposed surface of the conductive substrate and the exposed sidewalls of the dielectric layer. Form a copper conductor over the barrier layer and overfilling the narrow hole in the trench. Etch away material from the surface of the copper conductor by a CMP process lowering the copper leaving a thin layer of copper over the barrier layer above the dielectric layer aside from the hole. Form a copper passivation by combining an element selected from silicon and germanium with copper on the exposed surfaces of the copper surfaces forming an interface in the narrower hole between the copper and the copper compound located below the dielectric top level. Etch away material from the surface of the copper compound and the barrier layer to planarize the copper compound by etching down to the dielectric top level leaving a thin layer of the copper passivation compound covering the copper conductor in the narrower hole.