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Synchronous SRAM having pipelined enable and burst address generation

机译:具有流水线启用和突发地址生成的同步SRAM

摘要

A synchronous burst SRAM device comprising an SRAM core having a memory array, write drivers, sense amplifiers, and I/O buffers; an address register for receiving addresses for the memory array in the SRAM core; a burst address generator coupled to the address register for rapidly generating additional addresses using at least one address bit stored in the address register; an input for receiving an external address signal indicating that an external address is ready to be loaded into the address register; three chip enable inputs for receiving chip enable signals; chip enable and select logic coupled to the three chip enable inputs to perform the dual tasks of (1) selectively enabling or disabling the synchronous burst SRAM device and (2) selectively permitting access to the SRAM core when the SRAM device is enabled in accordance with a boolean function of the chip enable signals at the three chip enable inputs, the chip enable and select logic outputting an SRAM core enable signal resulting from the boolean function of the chip enable signals; an enable register having an input connected to the chip enable and select logic for temporarily storing the SRAM core enable signal, and having an output; a pipelined enable register coupled between the enable register and the SRAM core for temporarily storing the SRAM core enable signal and delaying propagation of the core enable signal to the SRAM core; and pipelining logic coupled to at least one of the three chip enable inputs to permit pipelining operation of the synchronous burst SRAM device.
机译:一种同步突发SRAM器件,包括具有存储器阵列,写驱动器,读出放大器和I / O缓冲器的SRAM内核;地址寄存器,用于接收SRAM内核中的存储器阵列的地址;突发地址发生器,与地址寄存器相连,用于使用存储在地址寄存器中的至少一个地址位快速产生附加地址;用于接收外部地址信号的输入,该信号指示外部地址已准备好加载到地址寄存器中;三个芯片使能输入,用于接收芯片使能信号;芯片使能和选择逻辑耦合到三个芯片使能输入,以执行以下双重任务:(1)有选择地启用或禁用同步突发SRAM器件;以及(2)当根据以下说明使能SRAM器件时有选择地允许访问SRAM内核在三个芯片使能输入端的芯片使能信号的布尔功能,芯片使能和选择逻辑输出由芯片使能信号的布尔功能产生的SRAM内核使能信号;使能寄存器,其输入连接到芯片使能和选择逻辑,用于临时存储SRAM内核使能信号,并具有输出;流水线使能寄存器,耦合在使能寄存器和SRAM内核之间,用于临时存储SRAM内核使能信号并延迟内核使能信号向SRAM内核的传播;耦合到三个芯片中至少一个的流水线逻辑使能输入,以允许同步突发SRAM器件的流水线操作。

著录项

  • 公开/公告号US06185656B2

    专利类型

  • 公开/公告日2001-02-06

    原文格式PDF

  • 申请/专利权人

    申请/专利号US09516592

  • 发明设计人 J. THOMAS PAWLOWSKI;

    申请日1999-07-09

  • 分类号G06F131/40;

  • 国家 US

  • 入库时间 2022-08-22 01:07:24

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