Method of enhancing CMP removal rate of polymer-like material and improving planarization in integrated circuit structure

摘要

A method for planarizing the surface of a semiconductor wafer is disclosed. It involves the steps of: (a) applying a coating solution containing a polymeric material on a semiconductor wafer having a non- planar surface; (b) curing the polymeric material to cause the polymeric material to become a hardened polymeric material; (c) subjecting the hardened polymeric material to a N.sub.2 O gas plasma treatment, so that an outer portion of the hardened polymeric material can be polished by a conventional CMP slurry which is typically intended for polishing silicon oxide; and (d) polishing the N.sub.2 O gas plasma treated polymeric material using a conventional CMP slurry. This method allows conventional CMP slurries to be used for the chemical-mechanical polishing of the chemically more inert polymeric material, thus eliminating stocking and potential compatibility problem. It also advantageously allows the unaffected portion of the polymeric material to serve as a self-provided etch stop.