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Interlevel dielectric stack containing plasma deposited fluorinated amorphous carbon films for semiconductor devices
Interlevel dielectric stack containing plasma deposited fluorinated amorphous carbon films for semiconductor devices
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机译:包含用于半导体器件的等离子沉积氟化非晶碳膜的层间电介质堆栈
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摘要
An interlevel dielectric stack for use in semiconductor devices is provided. The interlevel stack includes a bottom adhesion layer, a middle layer composed of a fluorinated amorphous carbon film, and a top adhesion layer. The bottom and top adhesion layers are composed of a silicon carbide material containing hydrogen. The dielectric stack is subjected to rigorous adhesion and thermal testing. A single continuous process for depositing the dielectric stack in a high density plasma reactor is also provided.
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