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CVD-based process for manufacturing stable low-resistivity poly-metal gate electrodes
CVD-based process for manufacturing stable low-resistivity poly-metal gate electrodes
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机译:基于CVD的稳定低电阻多金属栅电极制造工艺
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摘要
A process for forming a W-poly gate stack (110) comprising the steps of: (1) deposition of doped polysilicon (112) on a thin dielectric layer (108) covered substrate (102), (2) deposition of WNx by a CVD-based process, (3) thermal treatment to covert WNx into thermally stable barrier, WSiNx, (114) and to remove excess nitrogen and (4) deposition of W layer (116). The stack layers are then etched to form the gate electrode (110).
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