首页>
外国专利>
POLY-METAL GATE ELECTRODE AND METHOD FOR MANUFACTURING THE SAME
POLY-METAL GATE ELECTRODE AND METHOD FOR MANUFACTURING THE SAME
展开▼
机译:聚金属门电极及其制造方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
A poly metal gate electrode and a manufacturing method thereof are provided to acquire CMOSFET and memory device capable of operating in a predetermined frequency band of several GHz or more by using a W/W-Si-N/WSix/polysilicon structure. A gate electrode of a semiconductor device includes a silicon electrode(33), a silicide based diffusion barrier on the silicon electrode, a ternary diffusion barrier, and a metallic electrode. The ternary diffusion barrier(36) is formed on the silicide based diffusion barrier. The metallic electrode is formed on the ternary diffusion barrier. The ternary diffusion barrier is composed of a W-Si-N structure.
展开▼