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EPROM and flash memory cells with source-side injection and a gate dielectric that traps hot electrons during programming
EPROM and flash memory cells with source-side injection and a gate dielectric that traps hot electrons during programming
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机译:具有源极侧注入和栅极电介质的EPROM和闪存单元,在编程期间会俘获热电子
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摘要
An electrically-programmable read-only-memory (EPROM) and a flash memory cell having source-side injection are formed with a gate dielectric material, and a pair of gates that are both formed on the gate dielectric material. The gate dielectric material has substantially more electron traps than hole traps so that the gate dielectric material is capable of having a negative potential which is sufficient to inhibit the formation of a conductive channel during a read operation.
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