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High-gain and high-temperature applicable phototransistor with multiple mono-crystalline silicon-carbide layers on a silicon substrate
High-gain and high-temperature applicable phototransistor with multiple mono-crystalline silicon-carbide layers on a silicon substrate
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机译:高增益和高温适用的光电晶体管,在硅衬底上具有多个单晶碳化硅层
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摘要
The present invention relates to the structure and fabrication process of a high-gain monocrystal Silicon Carbide phototransistor applicable at high temperature. In view of the optical gain and applicable temperature of the conventional n-p-n type Silicon Carbide phototransistor are too low for practical usage, the present invention utilizes a newly developed n-i-p-i-n structure to strengthen the intrinsic properties of the element, in order to enhance optical gain of the phototransistor for being able to operate at high temperature steadily.
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