Surface treatment of DARC films to reduce defects in subsequent cap layers

摘要

The present invention comprises a method for preventing particle formation in a substrate overlying a DARC coating. The method comprising providing a semiconductor construct. A DARC coating is deposited on the construct with a plasma that comprises a silcon-based compound and N₂O. The DARC coating is exposed to an atmosphere that effectively prevents a formation of defects in the substrate layer. The exposed DARC coating is overlayed with the substrate.