Apparatus including the material source and concentric plasma and magnetic bucket and plasma vapor deposition

摘要

(57) magnetron sputtering from the target (51), vacuum behind the (61) dielectric window chamber wall (32) in the middle of the (58) opening the target (51) [summary] conductive metal coated material I sputtered and ionized in the processing space by dense plasma high-frequency energy coupling coil chamber (31) out of (65). The chamber pressure is in the range of 1.33~13.33Pa. (20) to make a multiple cusp magnetic field magnetic bucket made with (22) array of permanent magnets (23) after the (32) this chamber wall, repel the charged particles move to the chamber wall (32) from the plasma, plasma The enhanced confinement, and to improve the ionization ratio of the coated material concentration and uniformity of the plasma, and.