Copper thin film forming organic copper compounds with high vapor pressure metal organic chemical vapor deposition

摘要

PURPOSE: To obtain the subject compound expressed by a specific formula, liquid at room temperature or so, having stable vaporizing rate, excellent in the thermal stability in its vaporization, useful as a raw material for uniform, dense thin films made by MOCVD method, and also useful as e.g. a wiring material for semiconductor devices. ;CONSTITUTION: This compound is expressed by the formula (R¹ is h or a 1-8C alkyl; R² is a 1-4C alkyl; R³ and R⁴ are each a 1-8C straight chain fluoroalkyl; (n) is 1-3), e.g. (butynyltrimethylsilylmethylacetylene) (1,1,1,5,5,5-hexafluoro-2,4- pentanedionato)copper(I). It is recommended that this compound be obtained, for example, by the foll.owing process: butynyltrimethylsilylmethylacetylene followed by 1,1,1,5,5,5-hexafluoro-2,4-pentadione are dripped into a suspension composed of cuprous oxide and dry methylene chloride followed by agitation for 4 h and then filtration, and the filtrate is then subjected to distillation at reduced pressures.;COPYRIGHT: (C)1996,JPO