Production manner null of distribution feedback die semiconductor laser component and distribution feedback die semiconductor laser

摘要

PURPOSE: To manufacture a distributed feedback type semiconductor laser element with an excellent yield, which has a uniform diffraction grating formed over the whole stripe grooves, and has a structure of controlling the longitudinal mode of a light to be oscillated and a structure of controlling the lateral mode of the light. ;CONSTITUTION: By a first crystal growth process, a first clad layer 11, an active layer 12 and an optical waveguide layer 14 are sequentially formed on a semiconductor substrate 10. A diffraction grating 21 is formed on the surface of the optical waveguide layer 14. By a second crystal growth process, a current blocking layer 17 is formed on the optical waveguide layer 14 having the diffraction grating 21 formed thereon. The current blocking layer 17 is etched so that the diffraction grating 21 is exposed, thereby forming stripe grooves. By a third crystal growth process, a second clad layer 19 is formed on the current blocking layer 17 including the inside of the stripe grooves.;COPYRIGHT: (C)1993,JPO&Japio