The organicity copper compound for copper thin film formation the copper thin film choice growth modulo null which uses

摘要

PURPOSE: To obtain the subject compound having specific structure, excellent in vaporization characteristics and selectively growing capability, and enabling copper thin film to be grown selectively on semiconductor surface alone by organometallic chemical vacuum deposition. ;CONSTITUTION: This compound, [trans-1,2bis(trimethylsilyl)ethene](1,1,1,5,5,5- hexafluoro-2,4-pentanedionato)copper(I), is expressed by the formula, and can be preferably obtained by the following processes: trimethylsilylacetylene is reacted with dimethylchlorosilane to produce trans-1-(chlorodimethylsilyl)-2-(trimethylsilyl)ethene, which is then subjected to Grignard reaction with iodomethylmagnesium into trans-1,2-bis(trimethylsilyl) ethene, and this compound and 1,1,1,5,5,5-hexafluoro-2,4-pentanedione synthesized by Claisen condensation are mixed with cuprous oxide in an organic solvent.;COPYRIGHT: (C)1995,JPO