首页> 外国专利> The organicity copper compound for organicity metal chemical evaporation and the solution raw materials for copper thin film formation which include this and the copper thin film null following

The organicity copper compound for organicity metal chemical evaporation and the solution raw materials for copper thin film formation which include this and the copper thin film null following

机译:包括其和铜薄膜的用于有机金属化学蒸发的有机铜化合物和用于铜薄膜形成的溶液原料

摘要

PROBLEM TO BE SOLVED: To provide an organic copper compound which is used for metal organic chemical vapor deposition, is scarcely decomposed in a stored state before formed into a film, has a long life, gives an enhanced film-forming speed, can efficiently be decomposed on a substrate, has high evaporability, and has excellent adhesivity to base films. ;SOLUTION: The solution raw material for forming thin copper films comprises a copper+1(allylalkoxysilane)(hexafluoroacetylacetone) or is obtained by dissolving copper+1(allyltrimethylsilane) (hexafluoroacetylacetone), copper+1(trimethylvinylsilane) (hexafluoroacetylacetone) or copper+1(trimethoxyvinylsilane) (hexafluoroacetylacetone) in the copper+1(allylalkoxysilane) (hexafluoroacetylacetone) as a solvent. At least one of allyltrimethylsilane, trimethylvinylsilane, trimethoxyvinylsilane and allyltrimethoxysilane is preferably further added to the solution.;COPYRIGHT: (C)2001,JPO
机译:解决的问题:提供用于金属有机化学气相沉积的有机铜化合物,其在形成膜之前几乎不以储存状态分解,具有长寿命,提供提高的成膜速度,可以有效地被成膜。在基体上分解,具有高蒸发性,并且对基膜具有优异的粘合性。 ;解决方案:用于形成薄铜膜的溶液原料包括铜+1(烯丙基烷氧基硅烷)(六氟乙酰丙酮),或者是通过溶解铜+1(烯丙基三甲基硅烷)(六氟乙酰丙酮),铜+1(三甲基乙烯基硅烷)(六氟乙酰丙酮)或铜+而获得的铜+1(烯丙基烷氧基硅烷)(六氟乙酰丙酮)中的1(三甲氧基乙烯基硅烷)(六氟乙酰丙酮)为溶剂。优选进一步将烯丙基三甲基硅烷,三甲基乙烯基硅烷,三甲氧基乙烯基硅烷和烯丙基三甲氧基硅烷中的至少一种添加到溶液中。版权所有:(C)2001,JPO

著录项

  • 公开/公告号JP4102954B2

    专利类型

  • 公开/公告日2008-06-18

    原文格式PDF

  • 申请/专利权人 三菱マテリアル株式会社;

    申请/专利号JP19990288066

  • 发明设计人 齋 篤;小木 勝実;

    申请日1999-10-08

  • 分类号C07F7/18;C23C16/18;H01L21/285;

  • 国家 JP

  • 入库时间 2022-08-21 20:20:23

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