首页>
外国专利>
Solution raw materials null for copper thin film formation of organicity metal chemical evaporation
Solution raw materials null for copper thin film formation of organicity metal chemical evaporation
展开▼
机译:溶液原料无效,用于铜薄膜的形成,有机金属的化学蒸发
展开▼
页面导航
摘要
著录项
相似文献
摘要
PROBLEM TO BE SOLVED: To obtain a high film forming rate, to efficiently dissolve a raw material on a substrate, to increase its volatility and to make excellent its adhesion for a base film. ;SOLUTION: This raw material is composed by adding an organometallic copper compd. contg. monovalent copper metal such as copper+1 (allyltrimethylsilane)(hexafluoroacetylacetone) with a 1st compd. of one or ≥two kinds selected from the group of the hydrate of β-diketone, trifluoroacetone, the hydrate of trifluoroacetone, hexafluoroacetone, the hydrate of hexafluoroacetone, a hydroxy compd. of a β-diketone, the hydrate of the hydroxy compd. of β-diketone and the hydrate of pentyne. Moreover, it is composed by adding an organometallic copper compd. contg. monovalent copper metal with a 2nd compd. such as an alkylsilane, the hydrate of the alkylsilane, an alkoxysilane and the hydrate of the alkoxysilane and/or a 3rd compd. such as each derivative or an acetylene and an alkene.;COPYRIGHT: (C)2000,JPO
展开▼