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Solution raw materials null for copper thin film formation of organicity metal chemical evaporation

机译:溶液原料无效,用于铜薄膜的形成,有机金属的化学蒸发

摘要

PROBLEM TO BE SOLVED: To obtain a high film forming rate, to efficiently dissolve a raw material on a substrate, to increase its volatility and to make excellent its adhesion for a base film. ;SOLUTION: This raw material is composed by adding an organometallic copper compd. contg. monovalent copper metal such as copper+1 (allyltrimethylsilane)(hexafluoroacetylacetone) with a 1st compd. of one or ≥two kinds selected from the group of the hydrate of β-diketone, trifluoroacetone, the hydrate of trifluoroacetone, hexafluoroacetone, the hydrate of hexafluoroacetone, a hydroxy compd. of a β-diketone, the hydrate of the hydroxy compd. of β-diketone and the hydrate of pentyne. Moreover, it is composed by adding an organometallic copper compd. contg. monovalent copper metal with a 2nd compd. such as an alkylsilane, the hydrate of the alkylsilane, an alkoxysilane and the hydrate of the alkoxysilane and/or a 3rd compd. such as each derivative or an acetylene and an alkene.;COPYRIGHT: (C)2000,JPO
机译:解决的问题:为了获得高的成膜速率,以有效地将原料溶解在基板上,增加其挥发性,并使其对基膜的附着力优异。 ;解决方案:该原料是通过添加一种有机金属铜化合物制成的。续一价铜等一价铜金属,例如铜+1(烯丙基三甲基硅烷)(六氟乙酰丙酮)。选自β-二酮的水合物,三氟丙酮,三氟丙酮的水合物,六氟丙酮的水合物,六氟丙酮的水合物,羟基的组中的一种或两种。 β-二酮的羟基的水合物。 β-二酮和戊炔的水合物。而且,它是由添加的有机金属铜组成的。续一价铜金属与第二个化合物。如烷基硅烷,烷基硅烷的水合物,烷氧基硅烷和烷氧基硅烷的水合物和/或第三化合物。例如每种衍生物或乙炔和烯烃。;版权:(C)2000,JPO

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