PROCESSING METHOD OF THIN FILM, MANUFACTURING METHOD OF THIN FILM TRANSISTOR AND HIGH DENSITY PLASMA ETCHING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide the processing method of a thin film, the manufacturing method of a thin film transistor and a high density plasma etching device superior in an etching rate and a shape while securing a selection ratio with a substrate material in the dry etching of a metal material mainly comprising Mo.;SOLUTION: High frequency electric power is applied by an ICP(Induced Coupled Plasma) means from the upper part of a translucent substrate 105, at the same time, the mixed gas of sulfur hexafluoride (SF6) and oxygen is introduced by using the high density plasma etching device having a mechanism applying high frequency electric power separately even for a lower electrode 104 holding substrates, a degree of treatment vacuum is in the range of 6-15 Pa, the ratio (PICP/PBias) of the high frequency electric power (PICP) applied from the upper part of the substrate is in the range of 3-15 for the high frequency electric power (PBias) applied on the lower electrode 104, and the temperature of the lower electrode is in the range of 40-80°C.;COPYRIGHT: (C)2002,JPO